ITR20002 Features
?Fast response time

?High analytic 

?High sensitivity 

?Cut-off visible wavelength  λP=940nm 

?Pb free 

?This product itself will remain within RoHS compliant version
 

ITR20002 Descriptions
The ITR20002 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IR only . This is the normal situation. But when an reflecting object close to ITR , phototransistor receives the reflecting radiation .For additional component information, please refer to IR4204-10 and PT4204-6B/H26.
 

ITR20002 Applications

?Mouse Copier 

?Switch Scanner 

?Floppy disk driver 

?Non-contact Switching 

?For Direct Board 

ITR20002 Absolute Maximum Ratings (Ta=25℃)

Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 75mW

Input Reverse Voltage (VR) 5V

Input Forward Current ( IF) 50mA

Input Peak Forward Current ( IFP) 1.0 A

Output Collector Power Dissipation (PC) 75mW

Output Collector Current( IC) 20mA

Output Collector-Emitter Voltage (BVCEO) 30V

Output Emitter-Collector Voltage( BVECO) 5V

Operating Temperature (Topr) -40~+80 ℃

Storage Temperature (Tstg) -40~+85 ℃

Lead Soldering Temperature (Tsol )260 ℃≦5sec

ITR20002 Electro-Optical Characteristics (Ta=25℃)

Input Forward Voltage VF ---(Typ)1.2~(Max )1.5 V ---IF=20mA

Input Reverse Current IR --- (Max)10uA--- VR=5V

Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA

Input View Angle 2θ1/2---(Typ)35Deg--- IF=20mA

Output Dark Current ICEO --- (Max)100nA--- VCE=20V,Ee=0mW/cm2

Output C-E Saturation voltage VCE(sat) ---(Max)0.4V--- IC=2mA ,Ee=1mW/cm2

Transfer Characteristics Collector Current IC(ON) (Min.)0.2mA---VCE=5V, IF=20mA

Transfer Characteristics Leakage Current ICEOD---(Max)28uA---VCE=5V, IF=20mA

Transfer Characteristics Rise time tr --- (Typ)20 us--- VCE=5V IC=100uA RL=100?

Transfer Characteristics Fall time tf --- (Typ)20us--- VCE=5V IC=100uA RL=100?