PT334-6B-52 Phototransistor Features
?Fast response time
?High photo sensitivity
?Pb Free
PT334-6B-52 Absolute Maximum Ratings (Ta=25℃)
Collector-Emitter Voltage: 30V
Emitter-Collector-Voltage: 5V
Collector Current:: 20mA
working temperature: - 25 ~ + 85℃
storage temperature: - 40 ~ + 85℃
soldering temperature: infrared baking furnace: 260 ℃/10 seconds, hand soldering: 350 ℃/ 30 seconds
Power Dissipation at (or below) 25℃ Free Air Temperature: 75mW
PT334-6B-52 Electro-Optical Characteristics (Ta=25℃)
|
Parameter
|
Symbol
|
Condition
|
Min.
|
Typ.
|
Max.
|
Units
|
|
Collector – Emitter Breakdown Voltage
|
BVCEO
|
IC=100μA Ee=0mW/cm2
|
30
|
---
|
---
|
V
|
|
Emitter-Collector Breakdown Voltage
|
BVECO
|
IE=100μA Ee=0mW/cm2
|
5
|
---
|
---
|
V
|
|
Collector-Emitter Saturation Voltage
|
VCE)(sat)
|
IC=2mA Ee=1mW/cm2
|
---
|
---
|
0.4
|
V
|
|
Rise Time
|
tr
|
VCE=5V, IC=1mA, RL=1000Ω
|
---
|
15
|
---
|
μS
|
|
Fall Time
|
tf
|
---
|
15
|
---
|
μS
|
|
Collector Dark Current
|
ICEO
|
Ee=0mW/cm2 VCE=20V
|
---
|
---
|
100
|
nA
|
|
On State Collector Current
|
IC(on)
|
Ee=1mW/cm2 VCE=5V
|
1.77
|
---
|
7.07
|
mA
|
|
Wavelength of
Peak Sensitivity
|
λp
|
---
|
---
|
940
|
---
|
nm
|
|
Rang of Spectral Bandwidth
|
λ0.5
|
---
|
---
|
760-1100
|
---
|
nm
|
PT334-6B-52 Phototransistor Applications: Infrared applied system,Camera,Printer,Cockroach catcher